How to use ATR3110-LT to test SiC film?
From the application side, it is not excessive for silicon carbide to be called the "golden track". At present, for the two types of chips, silicon carbide and gallium nitride, if you want to maximize the characteristics of their materials, the ideal solution is carbonization. An epitaxial layer is grown on a silicon single crystal substrate. That is, the long silicon carbide epitaxial layer on silicon carbide is used to manufacture power devices; the long gallium nitride epitaxial layer on silicon carbide can be used to manufacture medium and low voltage high frequency power devices, high power microwave radio frequency devices and optoelectronic devices. Therefore, the silicon carbide substrate material can meet the demand for the substrate material of the two most potential materials at the moment, "one material has two uses", so this is the source of the saying that "the one who obtains silicon carbide has the world".
Test objects, objectives, and tools
Test Instrument: ATR3110-785(S7031CCD) (200-2400cm-1)
Objective: To obtain the Raman peak of different film layer samples.
Test tool: Probe adjustment rack
Test software version: V1.75
No. 3 sample, no color area, weak strength compared with color area, film area.
No color, no characteristic peak near 800cm-1.
4. The strength of the red region is higher than that of the light yellow region.
5# samples, tested from the center of the color ring outward, generally can be seen from the weak gradually increased strength.
No Raman signal was detected after 1000cm-1 due to the influence of fluorescence.
During the test, due to the characteristics of the sample itself, it is necessary to carefully adjust to the optimal test position, namely the focus, to ensure the best Raman signal.